Semiconductor structures with field effect transistor(s) having low-resistance source/drain contact(s)

ABSTRACT

Disclosed are semiconductor structures comprising a field effect transistor (FET) having a low-resistance source/drain contact and, optionally, low gate-to-source/drain contact capacitance. The structures comprise a semiconductor body and, contained therein, first and second source/drain regions and a channel region. A first gate is adjacent to the semiconductor body at the channel region and a second, non-functioning, gate is adjacent to the semiconductor body such that the second source/drain region is between the first and second gates. First and second source/drain contacts are on the first and source/drain regions, respectively. The second source/drain contact is wider than the first and, thus, has a lower resistance. Additionally, spacing of the first and second source/drain contacts relative to the first gate can be such that the first gate-to-second source/drain contact capacitance is equal to or less than the first gate-to-first source/drain contact capacitance. Also disclosed are associated formation methods.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present invention claims the benefit under 35 U.S.C. §120 as adivisional of presently pending U.S. patent application Ser. No.14/523,083 filed on Oct. 24, 2014, issued as U.S. Pat. No. 9,496,394issued on Nov. 15, 2016, the entire teachings of which are incorporatedherein by reference.

BACKGROUND

The present disclosure relates to semiconductor structures and, morespecifically, to semiconductor structures comprising at least one fieldeffect transistor (FET) having a low-resistance source/drain contact andmethods of forming these semiconductor structures.

Integrated circuit design decisions are often driven by devicescalability, device density, manufacturing efficiency and costs. Insemiconductor structures comprising field effect transistors (FETs),such as planar FETs or multi-gate non-planar FETs (e.g., fin-type FETs(FINFETs), also referred to herein as a dual gate FETs, and tri-gateFETs), size scaling reduces the width of contacts and, thereby increasescontact resistance. Size scaling also reduces the separation distancesbetween source/drain contacts and gates and, thereby increasesgate-to-source/drain contact capacitance. Increases in the source/draincontact resistance and in the gate-to-source/drain contact capacitancecan negatively impact device performance. Therefore, there is a need inthe art for improved semiconductor structures and methods of formingthese structures with one or more field effect transistors each having asource/drain contact with relatively low resistance and/or havingrelatively low gate-to-source/drain contact capacitance in order tooptimize device performance.

SUMMARY

Disclosed herein are embodiments of a first semiconductor structure. Thefirst semiconductor structure can comprise a semiconductor body. Thesemiconductor body can comprise at least the following components of afirst field effect transistor (FET): a first source/drain region, asecond source/drain region, and a channel region between the firstsource/drain region and the second source/drain region. The firstsemiconductor structure can further comprise multiple gates. These gatescan comprise a first gate adjacent to the semiconductor body at thechannel region and a second gate, which is non-functioning, adjacent tothe semiconductor body such that the second source/drain region isbetween the first gate and second gate. The first semiconductorstructure can further comprise multiple source/drain contacts. Thesesource/drain contacts can comprise a first source/drain contact on thefirst source/drain region and a second source/drain contact on thesecond source/drain region. The second source/drain contact can be widerthan the first source/drain contact and, thus, can have a lowerresistance than the first source/drain contact. The second source/draincontact can also be closer to the second gate than it is to the firstgate. In one embodiment, the second source/drain contact can actuallyextend laterally onto the second gate. More specifically, in oneembodiment the second source/drain contact can be separated from thefirst gate by a first distance and separated from the second gate by asecond distance that is less than the first distance. In anotherembodiment, the second source/drain contact can be separated from thefirst gate and can extend laterally onto the second gate. In eithercase, the first source/drain contact can be separated from the firstgate by some distance (referred to herein as a third distance), which iseither approximately equal to the first distance that separates thesecond source/drain contact from the first gate or less than that firstdistance.

Disclosed herein are also embodiments of a second semiconductorstructure. The second semiconductor structure can comprise semiconductorbody and an isolation region laterally surrounding the semiconductorbody. The semiconductor body can comprise at least the followingcomponents of a first field effect transistor (FET): a firstsource/drain region, a second source/drain region at one end of thesemiconductor body, and a channel region between the first source/drainregion and the second source/drain region. The second semiconductorstructure can further comprise multiple gates. These gates can comprisea first gate adjacent to the semiconductor body at the channel regionand a second gate, which is non-functioning, adjacent to thesemiconductor body at an interface between the isolation region and thesecond source/drain region such that the second source/drain region isbetween the first gate and second gate. The second semiconductorstructure can further comprise multiple source/drain contacts. Thesesource/drain contacts can comprise a first source/drain contact on thefirst source/drain region and a second source/drain contact on thesecond source/drain region. The second source/drain contact can be widerthan the first source/drain contact and, thus, can have a lowerresistance than the first source/drain contact. Additionally, the secondsource/drain contact can extend laterally onto the second gate.

Also disclosed herein is a method of forming the embodiments of thefirst semiconductor structure described above. The method can compriseforming a semiconductor body comprising at least the followingcomponents of a first field effect transistor (FET): a firstsource/drain region, a second source/drain region, and a channel regionbetween the first source/drain region and the second source/drainregion. The method can further comprise forming multiple gate. Thesegates can comprise a first gate adjacent to the semiconductor body atthe channel region and a second gate, which is non-functioning, adjacentto the semiconductor body such that the second source/drain region isbetween the first gate and second gate. The method can further compriseforming multiple source/drain contacts. These source/drain contacts cancomprise a first source/drain contact on the first source/drain regionand a second source/drain contact on the second source/drain region.These source/drain contacts can be formed such that the secondsource/drain contact is wider than the first source/drain contact and,thus, such that it has a lower resistance than the first source/draincontact. Additionally, these source/drain contacts can be formed suchthat the second source/drain contact is closer to the second gate thanthe first gate. For example, in this method, the multiple source/draincontacts can be formed such that the second source/drain contact isseparated from the first gate by a first distance and such that thesecond source/drain contact is separated from the second gate by asecond distance that is less than the first distance. Alternatively, themultiple source/drain contacts can be formed such that the secondsource/drain contact is separated from the first gate and such that thesecond source/drain contact actually extends laterally onto the secondgate. In either case, the multiple contacts can be formed such that thefirst source/drain contact is separated from the first gate by somedistance (referred to herein as a third distance), which is eitherapproximately equal to the first distance that separates the secondsource/drain contact from the first gate or less than that firstdistance.

Also disclosed herein is a method of forming the embodiments of thesecond semiconductor structure described above. This method can compriseforming a semiconductor body that is laterally surrounded by anisolation region and that comprises at least the following components ofa first field effect transistor (FET): a first source/drain region, asecond source/drain region at one end of the semiconductor body, and achannel region between the first source/drain region and the secondsource/drain region. The method can further comprise forming multiplegates. These gates can comprise a first gate adjacent to thesemiconductor body at the channel region and a second gate, which isnon-functioning, positioned adjacent to the semiconductor body at aninterface between the isolation region and the second source/drainregion such that the second source/drain region is between the firstgate and second gate. The method can further comprise forming multiplesource/drain contacts. These source/drain contacts can comprise a firstsource/drain contact on the first source/drain region and a secondsource/drain contact on the second source/drain region. The source/draincontacts can be formed such that the second source/drain contact iswider than the first source/drain contact and, thus, such that it has alower resistance than the first source/drain contact. Additionally, thesource/drain contacts can be formed such that the second source/draincontact actually extends laterally onto the second gate.

BRIEF DESCRIPTION OF THE DRAWINGS

The embodiments herein will be better understood from the followingdetailed description with reference to the drawings, which are notnecessarily drawn to scale and in which:

FIGS. 1A and 1B are top view and cross-section diagrams, respectively,of an embodiment of a first semiconductor structure comprising at leastone field effect transistor (FET) having a low-resistance source/draincontact;

FIGS. 2A and 2B are top view and cross-section diagrams, respectively,of another embodiment of the first semiconductor structure;

FIGS. 3A and 3B are top view and cross-section diagrams, respectively,of yet another embodiment of the first semiconductor structure;

FIGS. 4A and 4B are top view and cross-section diagrams, respectively,of yet another embodiment of the first semiconductor structure;

FIGS. 5A and 5B are top view and cross-section diagrams, respectively,of an embodiment of a second semiconductor structure comprising at leastone FET having a low-resistance source/drain contact;

FIGS. 6A and 6B are top view and cross-section diagrams, respectively,of another embodiment of the second semiconductor structure;

FIG. 7 is a flow diagram illustrating a method of forming theembodiments of the first semiconductor structure;

FIG. 8 is a cross-section diagram illustrating a partially completedsemiconductor structure formed according to the method of FIG. 7 aboveor the method of FIG. 10 below;

FIG. 9 is a cross-section diagram illustrating a partially completedsemiconductor structure formed according to the method of FIG. 7 above;

FIG. 10 is a flow diagram illustrating a method of forming theembodiments of the second semiconductor structure;

FIG. 11 is a cross-section diagram illustrating a partially completedsemiconductor structure formed according to the method of FIG. 10;

FIG. 12 shows a block diagram illustrating an exemplary design flow usedin the design, simulation, test, layout, and manufacture of thesemiconductor structures disclosed herein; and,

FIG. 13 is schematic diagram illustrating an exemplary computer systemthat can be used to implement the design flow of FIG. 12.

DETAILED DESCRIPTION

As mentioned above, integrated circuit design decisions are often drivenby device scalability, device density, manufacturing efficiency andcosts. In semiconductor structures comprising field effect transistors(FETs), such as planar FETs or multi-gate non-planar FETs (e.g.,fin-type FETs (FINFETs), also referred to herein as a dual gate FETs,and tri-gate FETs), size scaling reduces the width of contacts and,thereby increases contact resistance. Size scaling also reduces theseparation distances between source/drain contacts and gates and,thereby increases gate-to-source/drain contact capacitance. Increases inthe source/drain contact resistance and in the gate-to-source/draincontact capacitance can negatively impact device performance.

In view of the foregoing, disclosed herein are semiconductor structurescomprising at least one field effect transistor (FET) having alow-resistance source/drain contact and, optionally, lowgate-to-source/drain contact capacitance. The semiconductor structurescan comprise a semiconductor body and, within the semiconductor body,first and second source/drain regions and a channel region for a FET. Afirst gate for the FET can be adjacent to the semiconductor body at thechannel region and a non-functioning second gate can be adjacent to thesemiconductor body such that the second source/drain region is betweenthe first and second gates. First and second source/drain contacts canbe on the first and source/drain regions, respectively. The secondsource/drain contact can be wider than the first so as to have a lowerresistance than the first source/drain contact. Additionally, spacing ofthe first and second source/drain contacts relative to the first gatecan be such that the first gate-to-second source/drain contactcapacitance is equal to or less than the first gate-to-firstsource/drain contact capacitance. Also disclosed are methods of formingthese semiconductor structures.

More particularly, FIGS. 1A-1B, 2B-2B, 3A-3B and 4A-4B illustrateembodiments 100A-D of a first semiconductor structure comprising a firstfield effect transistor (FET) 191 and, optionally, a second FET 192.FIGS. 5A-5B and 6A-6B illustrate embodiments 200A-B of a secondsemiconductor structure comprising a first field effect transistor (FET)291 and, optionally, a second FET 292. For purposes of illustration, theembodiments 100A-D and 200A-B of the first and semiconductor structuresare described below and shown in the Figures as comprising the optionalsecond FET 192, 292.

The first and second semiconductor structures 100A-D and 200A-B cancomprise semiconductor-on-insulator (SOI) structures. For example, thesestructures can each comprise a semiconductor substrate 102, 202 (e.g., asilicon substrate or any other suitable semiconductor substrate, such asa germanium substrate, a gallium arsenide substrate, a gallium nitridesubstrate, etc.), an insulator layer 103, 203 (e.g., a silicon dioxidelayer, a silicon nitride layer, a silicon oxynitride layer or any othersuitable insulator layer) on the semiconductor substrate 102, 202 and asemiconductor layer on the insulator layer 103, 203. Alternatively,these structures can comprise a bulk semiconductor structures. Forexample, they can each comprise a bulk semiconductor substrate (e.g., abulk silicon substrate or any other suitable bulk semiconductorstructure (e.g., a bulk germanium substrate, a bulk gallium arsenidesubstrate, a bulk gallium nitride substrate, etc.), wherein an upperportion of the semiconductor substrate is isolated from a lower portionof the semiconductor substrate by, for example, a buried well region.

Referring specifically to FIGS. 1A-1B, 2B-2B, 3A-3B and 4A-4B, each ofthe embodiments 100A-D of the first semiconductor structure can comprisea semiconductor body 110. As illustrated, the semiconductor body 110 cancomprise an essentially rectangular-shaped planar semiconductor body forplanar field effect transistor(s). A planar semiconductor body can bedefined by a shallow trench isolation (STI) region 105 in thesemiconductor layer above the insulator layer 103 in an SOI structure(or in the upper portion of the substrate in a bulk semiconductorstructure) such that the STI region 105 laterally surrounds thesemiconductor body 110 (i.e., is adjacent to opposing sides and ends ofthe semiconductor body 110). Although not shown, the semiconductor body110 can, alternatively, comprise an essentially rectangular-shapednon-planar semiconductor body (also referred to herein as asemiconductor fin) for multi-gate non-planar field effect transistor(s)(e.g., dual-gate FETs, also referred to herein as fin-type FETs, andtri-gate FETs). A non-planar semiconductor body can be defined (e.g.,patterned and etched) from the semiconductor layer above the insulatorlayer 103 in an SOI structure (or in the upper portion of the substratein a bulk semiconductor structure).

In any case, in each of the embodiments 100A-D of the firstsemiconductor structure, the semiconductor body 110 can comprise atleast the following components of the first FET 191: a firstsource/drain region 112(a); a second source/drain region 112(b); and achannel region 111 positioned laterally between the first source/drainregion 112(a) and the second source/drain region 112(b). In each of theembodiments 100A-D of the semiconductor structure, the semiconductorbody 110 can further comprise the following components of the second FET192: an additional first source/drain region 114(a); an additionalsecond source/drain region 114(b); and an additional channel region 113positioned laterally between the additional first source/drain region114(a) and the additional second source/drain region 114(b). Theadditional second source/drain region 114(b) of the second FET 192 canbe positioned adjacent to the second source/drain region 112(b) of thefirst FET 191 and a well region 115 can be positioned laterally betweenand can physical separate the second source/drain region 112(b) andadditional second source/drain region 114(b). The well region 115 can,for example, have the same type conductivity as the channel region 111.Optionally, although not shown, the semiconductor body 110 can furthercomprise one or more additional components for one or both of the FETs191 and 192 including, but not limited to, halo region(s) andsource/drain extension region(s). Such regions are well known in the artand, thus, the details thereof are omitted from this specification inorder to allow the reader to focus on the salient aspects of thedisclosed semiconductor structures.

Each of the embodiments 100A-D of the first semiconductor structure canfurther comprise multiple gates. The multiple gates can comprise a firstgate 121 for the first FET 191 adjacent to the semiconductor body 110 atthe channel region 111; a second gate 122, which is a non-functioninggate (i.e., an inactive gate), adjacent to the semiconductor body 110such that the second source/drain region 112(b) is between the firstgate 121 and the second gate 122; and an additional gate 123 for thesecond FET 192 adjacent to the semiconductor body 110 at the additionalchannel region 113. The multiple gates can have an approximately uniformpitch. The multiple gates can further all have the same gate length.That is, the length 161 of the first gate 121, the length 162 of thesecond gate 122 and the length 163 of the additional gate 123 can all beapproximately equal, as shown in the embodiments 100A of FIGS. 1A-1B and100C of FIGS. 3A-3B. Alternatively, the functioning and non-functioninggates can have different lengths. That is, the length 161 of the firstgate 121 for the first FET 191 and the length 163 of the additional gate123 for the second FET 192 can be greater than the length 162 of thesecond gate 122 (i.e., the non-functioning gate), as shown inembodiments 100B of FIGS. 2B-2B and 100D of FIGS. 4A-4B.

Gate sidewall spacers 125 (e.g., silicon nitride gate sidewall spacers)can be positioned adjacent to the sidewalls of all of the multiplegates, as shown in embodiments 100A of FIGS. 1A-1B and 100C of FIGS.3A-3B. Alternatively, the non-functioning gates can be devoid ofsidewall spacers. That is, only the first gate 121 of the first FET 191and the additional gate 123 of the second FET 192 can have gate sidewallspacers 125, as shown in the embodiments 100B of FIGS. 2B-2B and 100D ofFIGS. 4A-4B.

Each of the embodiments 100A-D of the first semiconductor structure canfurther comprise interlayer dielectric material 190 covering themultiple gates, covering the portions of the semiconductor body 110adjacent to those gates (i.e., on the first and second source/drainregions 112(a)-(b) and on the additional first and second source/drainregions 114(a)-(b)) and covering the isolation region 105 surroundingthe semiconductor body 110. The interlayer dielectric material cancomprise, for example, one or more layers of any of the following:silicon dioxide, silicon nitride, silicon oxynitride,borophosphosilicate glass (BPSG), phosphosilicate glass (PSG), boronsilicate glass (BSG), undoped silicate glass (USG), or any othersuitable interlayer dielectric material.

Each of the embodiments 100A-D of the first semiconductor structure canfurther comprise multiple contacts that extend through the interlayerdielectric material 190 to various components of the FETs 191-192 (e.g.,to the source/drain regions 112(a)-(b) and 114(a)-(b) (as illustrated),to the first gate 121 and additional gate 123 (not shown), etc.). Forthe first FET 191, the source/drain contacts can comprise a firstsource/drain contact 131 on the first source/drain region 112(a) and asecond source/drain contact 132 on the second source/drain region112(b). For the second FET 192, the source/drain contacts can comprisean additional first source/drain contact 133 on the additional firstsource/drain region 114(a) and an additional second source/drain contact134 on the additional second source/drain region 114(b). The secondsource/drain contact 132 can be wider than the first source/draincontact 131 (i.e., the first source/drain contact 131 can have a width171 and the second source/drain contact 132 can have a width 172 that isgreater than the width 171 of the first source/drain contact 131). Thus,the second source/drain contact 132 can have lower resistance than thefirst source/drain contact 131 in the first FET 191. Similarly, theadditional second source/drain contact 134 can be wider than theadditional first source/drain contact 133. For example, the additionalfirst source/drain contact 133 can have the same width as the firstsource/drain contact 131 and the additional second source/drain contact134 can have the same width as the second source/drain contact 132.Thus, in the second FET 192, the additional second source/drain contact134 can have a lower resistance than the additional first source/draincontact 133.

The second source/drain contact 132 can further be closer to the secondgate 122 than it is to the first gate 121. Specifically, as shown in theembodiments 100A of FIGS. 1A-1B and 100B of FIGS. 2B-2B, the secondsource/drain contact 132 can be separated from the first gate 121 by afirst distance 151 and can be separated from the second gate 122 by asecond distance 152 that is less than the first distance 151.Alternatively, as shown in the embodiments 100C of FIGS. 3A-3B and 100Dof FIGS. 4A-4B), the second source/drain contact 132 can be separatedfrom the first gate 121 by the first distance 151 and can actuallyextend laterally onto the second gate 122. In either case, the firstsource/drain contact 131 can be separated from the first gate 121 bysome distance (referred to herein as the third distance 153), which iseither approximately equal to the first distance 151 (see the embodiment100A of FIGS. 1A-1B or the embodiment 100C of FIGS. 3A-3B) or less thanthat first distance 151 (see the embodiment 100B of FIGS. 2B-2B or 100Dof FIGS. 4A-4B). The additional first and second source/drain contacts133-134 can be similarly positioned such that the first FET 191 andsecond FET 192 are essentially symmetrical.

Placement of the first and second source/drain contacts 131-132 relativeto the first gate 121 and placement of the second source/drain contact132 relative to the second gate 122, as described above, ensures thefirst gate-to-second source/drain contact capacitance in the first FET191 will be approximately equal to the first gate-to-first source/draincontact capacitance (see embodiments 100A of FIGS. 1A-1B and 100C ofFIGS. 3A-3B) or less than the first gate-to-first source/drain contactcapacitance (see embodiments 100B of FIGS. 2A-2B and 100D of FIGS.4A-4B). Since the second FET 192 is essentially symmetrical to the firstFET 191, the additional gate-to-additional second source/drain contactcapacitance in the second FET 192 will similarly be equal to or lessthan the additional gate-to-additional first source/drain contactcapacitance.

It should be noted that in the embodiment 100C of FIGS. 3A-3B, thesecond source/drain contact 132 and additional second source/draincontact 134 each extend laterally onto the second gate 122 (i.e., thenon-functioning gate), but remain as discrete contact structures. Inthis case, the FETs 191-192 can comprise the same type FETs or differenttype FETs and the second source/drain region 112(b) and the additionalsecond source/drain region 114(b) can comprise both source regions, bothdrain regions or a source region and a drain region. Alternatively, inthe embodiment 100D of FIGS. 4A-4B, the second source/drain contact 132and additional second source/drain contact 134 can each extend laterallyonto the second gate 122 (i.e., onto the non-functioning gate) and canbe merged above the second gate 122. In this case, the FETs 191-192 cancomprise the same type FETs and both the second source/drain region112(b) and the additional second source/drain region 114(b) shouldcomprise source regions or drain regions.

Referring specifically to FIGS. 5A-5B and 6A-6B, each of the embodiments200A-B of the second semiconductor structure can comprise asemiconductor body 210 for the first FET 291 and an additionalsemiconductor body 215 for the second FET 292. The semiconductor body210 and the additional semiconductor body 215 can be in end-to-endalignment (i.e., the end 207 of the semiconductor body 210 can beadjacent to and aligned with the end 208 of the semiconductor body 215).As illustrated, the semiconductor body 210 and the additionalsemiconductor body 215 can comprise essentially rectangular-shapedplanar semiconductor bodies for planar FETs. Such planar semiconductorbodies can be defined by a shallow trench isolation (STI) region 205 inthe semiconductor layer above the insulator layer 203 in an SOIstructure (or in the upper portion of the substrate in a bulksemiconductor structure). The STI region 205 can laterally surround eachof the semiconductor bodies 210 and 215. Thus, the end 207 of thesemiconductor body 210 and the end 208 of the additional semiconductorbody 215 will be separated by the isolation region 205. Although notshown, the semiconductor bodies 210 and 215 can, alternatively, compriseessentially rectangular-shaped non-planar semiconductor bodies (alsoreferred to herein as a semiconductor fins) for multi-gate non-planarfield effect transistor(s) (e.g., dual-gate FETs, also referred toherein as fin-type FETs, and tri-gate FETs). Non-planar semiconductorbodies can be defined (e.g., patterned and etched) from thesemiconductor layer above the insulator layer 203 in an SOI structure(or in the upper portion of the substrate in a bulk semiconductorstructure).

In each of the embodiments 200A-B of the second semiconductor structure,the semiconductor body 210 can comprise at least the followingcomponents of the first FET 291: a first source/drain region 212(a); asecond source/drain region 212(b) at one end 207 and, particularly, atthe end 207 adjacent to the isolation region 205 opposite the end 208 ofthe additional semiconductor body 215; and a channel region 211positioned laterally between the first source/drain region 112(a) andthe second source/drain region 212(b). Similarly, the additionalsemiconductor body 210 can comprise at least the following components ofthe optional second FET 292: an additional first source/drain region214(a); an additional second source/drain region 214(b) at one end 208of the additional semiconductor body 215 and, particularly, at the end208 adjacent to the isolation region 205 and opposite the end 207 of thesemiconductor body 210; and an additional channel region 213 positionedlaterally between the additional first source/drain region 214(a) andthe additional second source/drain region 214(b). Although not shown,the semiconductor bodies 210 and 215 can each, optionally, comprise oneor more additional components for the FETs 291 and 292 including, butnot limited to, halo region(s) and source/drain extension region(s).Such regions are well known in the art and, thus, the details thereofare omitted from this specification in order to allow the reader tofocus on the salient aspects of the disclosed semiconductor structures.

Each of the embodiments 200A-B of the second semiconductor structure canfurther comprise multiple gates. The multiple gates can comprise a firstgate 221 for the first FET 291 adjacent to the semiconductor body 210 atthe channel region 211; and a second gate 222, which is anon-functioning gate (i.e., an inactive gate), adjacent to thesemiconductor body 210 at the interface between the isolation region 205and the second source/drain region 212(b) such that the secondsource/drain region 212(b) is between the first gate 221 and the secondgate 122. Additionally, the multiple gates can comprise an additionalfirst gate 223 for the second FET 292 adjacent to the additionalsemiconductor body 215 at the additional channel region 213; and anadditional second gate 224, which is a also a non-functioning gate,positioned adjacent to the additional semiconductor body 215 at theinterface between the isolation region 205 and the additional secondsource/drain region 214(b) such that the additional second source/drainregion 214(b) is between the additional first gate 223 and theadditional second gate 224.

The multiple gates (i.e., the first gate 221 of the first FET 291; thenon-functioning second gate 222; the additional first gate 223 of thesecond FET 292; and the non-functioning additional second gate 224) canhave an approximately uniform pitch. The multiple gates can further allhave the same gate length. That is, the length 261 of the first gate221, the length 262 of the second gate 222 and the lengths 263 and 264of the additional first and second gates 223 and 224, respectively, canall be approximately equal, as shown in the embodiment 200A of FIGS.5A-5B. Alternatively, the functioning and non-functioning gates can havedifferent lengths. That is, the length 261 of the first gate 221 of thefirst FET 291 and the length 263 of the additional first gate 223 of thesecond FET 292 (i.e., the lengths of the functioning gates of the firstFET 291 and second FET 292) can be greater than the length 262 of thesecond gate 222 and the length 264 of the additional second gate 224(i.e., than the lengths of the non-functioning gates), as shown inembodiments 200B of FIGS. 6A-6B.

Gate sidewall spacers 225 (e.g., silicon nitride gate sidewall spacers)can be positioned adjacent to the sidewalls of all of the multiplegates, as shown in embodiment 200A of FIGS. 5A-5B. Alternatively, thenon-functioning gates can be devoid of such gate sidewall spacers. Thatis, only the first gate 221 of the first FET 291 and the additionalfirst gate 223 of the optional second FET 292 (i.e., the functioninggates of the FETs 291-292) can have gate sidewall spacers 225, as shownin the embodiment 200B of FIGS. 6A-6B.

Each of the embodiments 200A-B of the second semiconductor structure canfurther comprise interlayer dielectric material 290 covering themultiple gates, covering the portions of the semiconductor bodies 210and 215 adjacent to the gates (i.e., on the first and secondsource/drain regions 212(a)-(b) and on the additional first and secondsource/drain regions 214(a)-(b)) and covering the isolation region 205surrounding the semiconductor bodies 210 and 215. The interlayerdielectric material can comprise, for example, one or more layers of anyof the following: silicon dioxide, silicon nitride, silicon oxynitride,borophosphosilicate glass (BPSG), phosphosilicate glass (PSG), boronsilicate glass (BSG), undoped silicate glass (USG), or any othersuitable interlayer dielectric material.

Each of the embodiments 200A-B of the second semiconductor structure canfurther comprise multiple contacts that extend through the interlayerdielectric material to various components of the FETs 291 and 292 (e.g.,to the source/drain regions 212(a)-(b) and 214(a)-(b) (as illustrated),to the first gate 221 and additional first gate 223 (not shown), etc.).For the first FET 291, the source/drain contacts can comprise a firstsource/drain contact 231 on the first source/drain region 212(a) and asecond source/drain contact 232 on the second source/drain region212(b). For the second FET 292, the source/drain contacts can comprisean additional first source/drain contact 233 on the additional firstsource/drain region 214(a) and an additional second source/drain contact234 on the additional second source/drain region 214(b). The secondsource/drain contact 232 can be wider than the first source/draincontact 231 (i.e., the first source/drain contact 231 can have a width271 and the second source/drain contact 232 can have a width 272 that isgreater than the width 1271 of the first source/drain contact 231).Thus, the second source/drain contact 232 can have lower resistance thanthe first source/drain contact 231 in the first FET 291. Similarly, theadditional second source/drain contact 234 can be wider than theadditional first source/drain contact 233. For example, the additionalfirst source/drain contact 1233 can have the same width as the firstsource/drain contact 231 and the additional second source/drain contact234 can have the same width as the second source/drain contact 232.Thus, in the second FET 292, the additional second source/drain contact234 can have a lower resistance than the additional first source/draincontact 233.

The second source/drain contact 232 can further be closer to the secondgate 222 than it is to the first gate 221. Specifically, the secondsource/drain contact 232 can be separated from the first gate 221 by adistance 251 (referred to herein as the first distance) and can actuallyextend laterally onto the second gate 222. The first source/draincontact 231 can be separated from the first gate 221 by some distance(referred to herein as the third distance 253), which is eitherapproximately equal to the first distance 251 (see the embodiment 200Aof FIGS. 5A-5B) or less than that first distance 251 (see the embodiment200B of FIGS. 6A-6B). The additional first and second source/draincontacts 233-234 can be similarly positioned such that the first FET 291and second FET 292 are essentially symmetrical.

Placement of the first and second source/drain contacts 231-232 relativeto the first gate 221 and placement of the second source/drain contact232 relative to the second gate 222, as described above, ensures thefirst gate-to-second source/drain contact capacitance in the first FET291 will be approximately equal to the first gate-to-first source/draincontact capacitance (see embodiments 200A of FIGS. 5A-5B) or less thanthe first gate-to-first source/drain contact capacitance (see embodiment200B of FIGS. 6A-6B). Since the second FET 292 is essentiallysymmetrical to the first FET 291, the additional firstgate-to-additional second source/drain contact capacitance in the secondFET 292 will similarly be equal to or less than the additional firstgate-to-additional first source/drain contact capacitance.

It should be understood that in the embodiments 100A-D of the firstsemiconductor structure illustrated in FIGS. 1A-1B, 2B-2B, 3A-3B and4A-4B and in the embodiments 200A-B of the second semiconductorstructure illustrated in FIGS. 5A-5B and 6A-6B the first FET 191, 291can be a first type FET, wherein the source/drain regions 112(a)-(b),212(a)-(b) have a first type conductivity at a relatively highconductivity level and the channel region 111, 211 has, for example, asecond type conductivity that is different from the first typeconductivity. It should be noted that the first type conductivity andthe second type conductivity would vary depending upon whether the firstFET 191, 291 is an N-type FET or a P-type FET. For example, for anN-type FET, the first type conductivity of the source/drain regions canbe N-type conductivity and the second type conductivity (e.g., of thechannel region) can be P-type conductivity, whereas, for a P-type FET,the first type conductivity of the source/drain regions can be P-typeconductivity and the second type conductivity (e.g., of the channelregion) can be N-type conductivity. Those skilled in the art willrecognize that different dopants can be used to achieve the differenttype conductivities (i.e., P-type conductivity and N-type conductivity)and that those dopants will vary depending upon the differentsemiconductor materials used. For example, a silicon-based semiconductormaterial can be doped with arsenic (As), phosphorous (P) or antimony(Sb) so as to have N-type conductivity or can be doped with boron (B),boron difluoride (BF₂) or indium (In) so as to have P-type conductivity.In another example, a gallium arsenide (GaAs) or gallium nitride(GaN)-based semiconductor material can be doped with silicon (Si) so asto have N-type conductivity or can be doped with magnesium (Mg) orberyllium (Be) so as to have P-type conductivity. Additionally, thoseskilled in the art will also recognize that the higher the concentrationof the particular dopant used, the higher the conductivity levelassociated with that dopant and vice versa. Furthermore, the differentconductivity types and levels will depend upon the relativeconcentration levels of different type dopants in the same region. Thesecond FET 192, 292 can similarly be a first type FET. Alternatively,the second FET 192, 292 can be a second type FET, wherein the additionalsource/drain regions 114(a)-(b), 214(a)-(b) have the second typeconductivity at a relatively high conductivity level and the additionalchannel region 113, 213 has, for example, the first type conductivity.

It should further be understood that in the embodiments 100A-D of thefirst semiconductor structure illustrated in FIGS. 1A-1B, 2B-2B, 3A-3Band 4A-4B and in the embodiments 200A-B of the second semiconductorstructure illustrated in FIGS. 5A-5B and 6A-6B the difference betweenfunctioning gates (e.g., the first gate 121 of the first FET 191 and theadditional gate 123 of the second FET 192 in the embodiments 100A-D orthe first gate 221 of the first FET 291 and the additional first gate223 of the second FET 292 in the embodiments 200A-B) and non-functioninggates (e.g., the second gate 122 in the embodiments 100A-D or the secondgate 222 and the additional second gate 224 in the embodiments 200A-B)is that each functioning gate is contacted and electrically connected toa power supply or other device, which can selectively apply a voltage tothe gate in order to alter current flow in the adjacent channel (i.e.,to selectively turn on or off the FET, depending upon the conductivitytype of the transistor). Each non-functioning gate is specifically notconnected to a power supply or other device (i.e., is not contacted)and, thus, remains permanently inactive and unable to alter current flowwithin the adjacent semiconductor body.

The functioning gates and the non-functioning gates described above canhave essentially identical compositions. That is, they can comprise thesame gate stack materials (i.e., the same gate dielectric layer(s) andgate conductor layer(s)). For example, the functioning gates and thenon-functioning gates can all comprise conventional gates comprising,for example, a silicon dioxide gate dielectric layer and a polysilicongate conductor layer on the silicon dioxide gate dielectric layer.Alternatively, the functioning gates and non-functioning gates can allcomprise replacement metal gates comprising, for example, a high-K gatedielectric layer and one or more metal layers on the high-K gatedielectric layer. Those skilled in the art will recognize that a“replacement metal gate” refers to a metal gate that, during processing,replaces a previously formed and selectively removed dummy gate (alsoreferred to herein as a sacrificial gate), which served as a placeholderfor the metal gate. Alternatively, the functioning gates andnon-functioning gates described above can have different compositions.For example, the functioning gates can comprise replacement metal gates,as described above, and the non-functioning gates can comprise dummygates. The dummy gates can comprise, for example, patternedsemiconductor (e.g., silicon, polysilicon, amorphous silicon, etc.)shapes or dielectric shapes, which, as mentioned above, typically serveas placeholders for replacement metal gates. Conventional gates,replacement metal gates, and dummy gates that are formed as placeholdersfor replacement metal gates are well known in the art and, thus, detailsof such gates are omitted from this specification in order to allow thereader to focus on the salient aspects of the disclosed semiconductorstructures.

Referring to FIG. 7, also disclosed herein is a method of forming theembodiments 100A-D of the first semiconductor structure, which aredescribed in detail above and illustrated in FIGS. 1A-1B, 2B-2B, 3A-3Band 4A-4B and which comprise a first field effect transistor (FET) 191and an optional second FET 192. For purposes of illustration, thismethod is described below and shown in the Figures as includingformation of the optional second FET 192.

The method can comprise providing a wafer 101 (see FIG. 8). The wafer101 can comprise a semiconductor-on-insulator (SOI) wafer comprising,for example, a semiconductor substrate 102 (e.g., a silicon substrate orany other suitable semiconductor substrate, such as a germaniumsubstrate, a gallium arsenide substrate, a gallium nitride substrate,etc.), an insulator layer 103 (e.g., a silicon dioxide layer, a siliconnitride layer, a silicon oxynitride layer or any other suitableinsulator layer) on the semiconductor substrate 102 and a semiconductorlayer on the insulator layer 103. Alternatively, the wafer 101 cancomprise a bulk semiconductor wafer comprising, for example, a bulksemiconductor substrate (e.g., a bulk silicon substrate or any othersuitable bulk semiconductor structure (e.g., a bulk germanium substrate,a bulk gallium arsenide substrate, a bulk gallium nitride substrate,etc.). Optionally, in the case of a bulk semiconductor wafer, a dopantimplantation process can be performed in order to form a buried wellregion that isolates the upper portion of the substrate from the lowerportion of the substrate.

The method can further comprise forming, on the wafer 101, asemiconductor body 110 for one or more FETs 191, 291 (702). To form asemiconductor body for planar FET(s), a shallow trench isolation (STI)region 105 can be formed (e.g., using conventional STI formationtechniques) in the semiconductor layer 104 above the insulator layer 103(or in the upper portion of a bulk semiconductor substrate, ifapplicable) such that the isolation region 105 defines the shape of anessentially rectangular-shaped planar semiconductor body and, therebylaterally surrounds that semiconductor body, as shown in FIG. 9.Although not shown, to form a semiconductor body for multi-gatenon-planar FET(s) (e.g., dual-gate FETs, also referred to herein asfin-type FETs, and tri-gate FETs), an essentially rectangular-shapednon-planar semiconductor body (also referred to herein as asemiconductor fin) can be formed (e.g., using conventional lithographicor sidewall image transfer (SIT) patterning and etch techniques) fromthe semiconductor layer 104 above the insulator layer 103 (or from theupper portion of a bulk semiconductor structure, if applicable).

In any case, as shown in FIG. 9, this semiconductor body 110 cancomprise at least the following components of the first FET 191: a firstsource/drain region 112(a); a second source/drain region 112(b); and achannel region 111 positioned laterally between the first source/drainregion 112(a) and the second source/drain region 112(b). Thesemiconductor body 110 can further comprise the following components ofthe second FET 192: an additional first source/drain region 114(a); anadditional second source/drain region 114(b); and an additional channelregion 113 positioned laterally between the additional firstsource/drain region 114(a) and the additional second source/drain region114(b). The additional second source/drain region 114(b) of the secondFET 192 can be positioned adjacent to the second source/drain region112(b) of the first FET 191. A well region 115 can be positionedlaterally between and can physical separate the second source/drainregion 112(b) from the additional second source/drain region 114(b).This well region 115 can, for example, have the same type conductivityas the channel region 111. Although not shown, the semiconductor body110 can, optionally, comprise one or more additional components for oneor both of the FETs 191 and 192 including, but not limited to, haloregion(s) and source/drain extension region(s). Such regions are wellknown in the art and, thus, the details thereof are omitted from thisspecification in order to allow the reader to focus on the salientaspects of the disclosed semiconductor structures.

It should be understood that, as in conventional FET processing, dopingprocesses used to achieve desired conductivity types and levels in anyof the regions described above (i.e., in the channel regions 111, 113,well region 115, S/D regions 112(a)-(b), 114(a)-(b), S/D extensionregion(s), and halo region(s)) may occur at various different timesduring processing (e.g., before gate formation; after gate formation,but before sidewall spacer formation; etc.). Such doping processes arewell known in the art and, thus, the details are omitted from thisspecification in order to allow the reader to focus on the salientaspects of the disclosed method.

The method can further comprise forming multiple gates (704).Specifically, as shown in FIGS. 1A-1B, 2B-2B, 3A-3B and 4A-4B, thefollowing gates can be formed at process 704: a first gate 121 for thefirst FET 191 adjacent to the semiconductor body 110 at the channelregion 111; a second gate 122 and, particularly, a gate that will benon-functioning gate in the resulting semiconductor structure (i.e.,that will be an inactive gate) adjacent to the semiconductor body 110such that the second source/drain region 112(b) is between the firstgate 121 and the second gate 122; and an additional gate 123 for thesecond FET 192 at the additional channel region 113.

These gates can be formed and, particularly, patterned at process 704 soas to have an approximately uniform pitch. These gates can further beformed and, particularly, patterned so that they all have the same gatelength or so that the functioning and non-functioning gates havedifferent lengths (705). That is, the gates can be formed such that thelength 161 of the first gate 121, the length 162 of the second gate 122and the length 163 of the additional gate 123 are all be approximatelyequal, as shown in the embodiments 100A of FIGS. 1A-1B and 100C of FIGS.3A-3B. Alternatively, they can be formed such that the length 161 of thefirst gate 121 and the length 163 of the additional gate 123 (i.e., thelengths of the functioning gates) are greater than the length 162 of thesecond gate 122 (i.e., the length of the non-functioning gate), as shownin embodiments 100B of FIGS. 2B-2B and 100D of FIGS. 4A-4B.

The gates can be formed at process 704 using, for example, conventionalgate processing techniques such that all of the gates (i.e., the firstgate 121 of the first FET 191, the second gate 122 and the additionalgate 123 of the second FET 192) have the same composition. For example,they can be formed as conventional gates. That is, one or more gatedielectric layers (e.g., a silicon oxide gate dielectric layer) candeposited over the semiconductor body 110 and one or more gate conductorlayers (e.g., a polysilicon gate conductor layer) can be deposited overthe gate dielectric layer(s). The stack of gate dielectric and gateconductor layers can then be lithographically patterned and etch to formmultiple conventional gates, having the gate pitch, gate lengths, etc.,as described above. Next, gate sidewall spacers 125 (e.g., siliconnitride gate sidewall spacers) can be formed on the sidewalls of thegates (e.g., using conventional sidewall spacer formation techniques).

Alternatively, the gates can be formed at process 704 using, forexample, replacement metal gate processing techniques such that all ofthe gates (i.e., the first gate 121 of the first FET 191, the secondgate 122 and the additional gate 123 of the second FET 192) havecomprise replacement metal gates or such that the first gate 121 andadditional gate 123 (i.e., the functioning gates) comprise replacementmetal gates and the second gate 122 (i.e., the non-functioning gate)comprises a dummy gate. That is, a blanket layer of a dummy gatematerial (e.g., a semiconductor material, such as silicon, polysilicon,or amorphous silicon, or a dielectric material) can be deposited overthe semiconductor body 110. This blanket layer can be lithographicallypatterned and etched to form multiple dummy gates. The multiple dummygates can have the same positions, gate pitch, gate lengths, etc. asrequired for the first gate 121, second gate 122 and additional gate123. Next, gate sidewall spacers 125 (e.g., silicon nitride gatesidewall spacers) can be formed on the sidewalls of the dummy gates(e.g., using conventional sidewall spacer formation techniques).Following gate sidewall spacer formation, one or more layers ofinterlayer dielectric material 190 can be deposited over the dummy gatesand planarized to expose the top surfaces of the dummy gates. Theinterlayer dielectric material can comprise, for example, one or morelayers of any of the following: silicon dioxide, silicon nitride,silicon oxynitride, borophosphosilicate glass (BPSG), phosphosilicateglass (BPSG), boron silicate glass (BSG), undoped silicate glass (USG),or any other suitable interlayer dielectric material. Next, either allof the dummy gates or only the dummy gates corresponding to the firstgate 121 and additional gate 123 (i.e., corresponding to the functioninggates for the FETs 191-192) can be selectively removed, creatingopenings in the interlayer dielectric material that are lined with gatesidewall spacers 125. It should be noted that the dummy gate material,sidewall spacer material and interlayer dielectric material should bedifferent materials so as to allow the dummy gates to be selectivelyremoved. Replacement metal gates are formed in these openings bydepositing a conformal high-K gate dielectric layer and, then, formingone or more metal layers on the high-K gate dielectric layer.

It should be noted that in the embodiments 100A of FIGS. 1A-1B and 100Cof FIGS. 3A-C all of the gates are laterally surrounded by gate sidewallspacers 125 (e.g., silicon nitride gate sidewall spacers). However, inthe embodiments 100B of FIGS. 2B-2B and 100D of FIGS. 4A-4B only thefirst gate 121 of the first FET 191 and the additional gate 123 of thesecond FET 192 (i.e., the functioning gates) have gate sidewall spacers125 and the second gate 122 (i.e., the non-functioning gate) is devoidof such a gate sidewall spacer. To achieve the embodiments 100A or 100C,all the gates can be formed, as described above, so as to have gatesidewall spacers or, alternatively, to achieve the embodiments 100B or100D, the second gate 122 can be masked during gate sidewall spacerformation or any gate sidewall spacer material formed on the second gate122 during gate sidewall spacer formation can be removed (706).

Following formation of the multiple gates, one or more layers ofinterlayer dielectric material 190 can be deposited so as to cover themultiple gates and any exposed portions of the semiconductor body 110adjacent to those gates (i.e., any exposed source/drain regions112(a)-(b), 114(a)-(b)) (708). The interlayer dielectric material cancomprise, for example, one or more layers of any of the following:silicon dioxide, silicon nitride, silicon oxynitride,borophosphosilicate glass (BPSG), phosphosilicate glass (BPSG), boronsilicate glass (BSG), undoped silicate glass (USG), or any othersuitable interlayer dielectric material.

Next, multiple contacts can be formed that extend through the interlayerdielectric material 190 to various components of the FETs 191-192 (e.g.,to the source/drain regions 112(a)-(b) and 114(a)-(b) (as illustrated),to the first gate 121 and additional gate 123 (not shown), etc.) (710).For the first FET 191, the source/drain contacts can comprise a firstsource/drain contact 131 on the first source/drain region 112(a) and asecond source/drain contact 132 on the second source/drain region112(b). For the optional second FET 192, these contacts can comprise anadditional first source/drain contact 133 on the additional firstsource/drain region 114(a); and an additional second source/draincontact 134 on the additional second source/drain region 114(b).

The contacts can be formed and, particularly, patterned at process 710such that the second source/drain contact 132 is wider than the firstsource/drain contact 131 and, similarly, such that the additional secondsource/drain contact 134 is wider than the additional first source/draincontact 133. Thus, the second source/drain contact 132 will have lowerresistance than the first source/drain contact 131 in the first FET 191and the additional second source/drain contact 134 will have a lowerresistance than the additional first source/drain contact 133 in thesecond FET 192.

Additionally, the contacts can be formed and, particularly, patterned atprocess 710 such that, in the first FET 191, the second source/draincontact 132 is closer to the second gate 122 than it is to the firstgate 121. For example, the contacts can be formed such that the secondsource/drain contact 132 is separated from the first gate 121 by a firstdistance 151 and either is separated from the second gate 122 by asecond distance 152, which is less than the first distance 151 (see theembodiments 100A and 100B of FIGS. 1A-1B and 2B-2B, respectively), orextends laterally onto the second gate 122 (see embodiments 100C and100D of FIGS. 3A-3B and 4A-4B, respectively) (711). Furthermore, thecontacts can be formed and, particularly, patterned such that the firstsource/drain contact 131 is separated from the first gate 121 by a thirddistance 153, which is either approximately equal to the first distance151 (see the embodiments 100A and 100C of FIGS. 1A-1B and 3A-3B,respectively) or is less than that first distance 151 (see theembodiments 100B and 100D of FIGS. 2B-2B and 4A-4B, respectively) (712).The contacts can further be formed and, particularly, patterned suchthat the additional first and second source/drain contacts 133-134 inthe optional second FET 192 are similarly positioned such that the FETs191 and 192 are essentially symmetric.

The contacts can be formed at process 710, as described above, using,for example, damascene contact formation techniques, self-alignedcontact formation techniques or any other suitable contact formationtechniques. These techniques are well known in the art and, thus, thedetails have been omitted from this specification in order to allow thereader to focus on the salient aspects of the disclosed method.

Placement of the first and second source/drain contacts 131-132 relativeto the first gate 121 and placement of the second source/drain contact132 relative to the second gate 122 at process 710, as described above,ensures the first gate-to-second source/drain contact capacitance in thefirst FET 191 will be approximately equal to the first gate-to-firstsource/drain contact capacitance (see embodiments 100A of FIGS. 1A-1Band 100C of FIGS. 3A-3B) or less than the first gate-to-firstsource/drain contact capacitance (see embodiments 100B of FIGS. 2A-2Band 100D of FIGS. 4A-4B). Since the second FET 192 is essentiallysymmetrical to the first FET 191, the additional gate-to-additionalsecond source/drain contact capacitance in the second FET 192 willsimilarly be equal to or less than the additional gate-to-additionalfirst source/drain contact capacitance. Furthermore, reducing the lengthof the second gate 122 relative to the lengths of the first gate 121 andthe additional gate 123 and/or removing the gate sidewall spacer fromthe second gate 122 (see the optional process steps described above),opens up more surface area of the semiconductor body 210 available forformation of the second source/drain contact 132 and the additionalsecond source/drain contact 134 and, thereby allows the widths of thosecontacts 132 and 134 to be maximized to further reduce contactresistance without moving them closer to the gates 121 and 123,respectively, and, thereby without further increasinggate-to-source/drain contact capacitance.

It should be noted that, when the second source/drain contact 132 andadditional second source/drain contact 134 are formed at process 710 soas to extend laterally onto the second gate 122 (i.e., thenon-functioning gate), they should generally be patterned so as to formdiscrete contact structures. However, if the FETs 191-192 being formedcomprise the same type FETs and the second source/drain region 112(b)and the additional second source/drain region 114(b) are either bothsource regions or both drain regions, then, optionally, the secondsource/drain contact 132 and the additional second source/drain contact134 can be patterned so that they are merged into a single contactstructure above the second gate 122, as shown in the embodiment 100D ofFIGS. 4A-4B.

Referring to FIG. 10, also disclosed herein is a method of forming theembodiments 200A-B of the second semiconductor structure, which aredescribed in detail above and illustrated in FIGS. 5A-5B and 6A-6B andwhich comprise a field effect transistor (FET) 291 and, optionally, asecond FET 292. For purposes of illustration, the method is describedbelow and shown in the Figures as including formation of the optionalsecond FET 292.

The method can comprise providing a wafer 201 (see FIG. 8). The wafer201 can comprise a semiconductor-on-insulator (SOI) wafer comprising,for example, a semiconductor substrate 202 (e.g., a silicon substrate orany other suitable semiconductor substrate, such as a germaniumsubstrate, a gallium arsenide substrate, a gallium nitride substrate,etc.), an insulator layer 103 (e.g., a silicon dioxide layer, a siliconnitride layer, a silicon oxynitride layer or any other suitableinsulator layer) on the semiconductor substrate 102 and a semiconductorlayer on the insulator layer 103. Alternatively, the wafer can comprisea bulk semiconductor wafer comprising, for example, a bulk semiconductorsubstrate (e.g., a bulk silicon substrate or any other suitable bulksemiconductor structure (e.g., a bulk germanium substrate, a bulkgallium arsenide substrate, a bulk gallium nitride substrate, etc.).Optionally, in the case of a bulk semiconductor wafer, a dopantimplantation process can be performed in order to form a buried wellregion that isolates the upper portion of the substrate from the lowerportion of the substrate.

The method can further comprise forming, on the wafer 201, asemiconductor body 210 for the first FET 291 and an additionalsemiconductor body 215 for the second FET 292 (1002). To formsemiconductor bodies for planar FETs (as illustrated), a shallow trenchisolation (STI) region 205 can be formed (e.g., using conventional STIformation techniques) in the semiconductor layer 204 above the insulatorlayer 203 (or in the upper portion of a bulk semiconductor substrate, ifapplicable) so as to define the shapes of two discrete essentiallyrectangular-shaped planar semiconductor bodies 210 and 215. Thesemiconductor bodies 210, 215 can be in end-to-end alignment (i.e., oneend 207 of the semiconductor body 210 can be aligned with an adjacentend 208 of the additional semiconductor body 215) and physicallyseparated by the isolation region 205, as shown in FIG. 11. Although notshown, to form semiconductor bodies for multi-gate non-planar FET(s)(e.g., dual-gate FETs, also referred to herein as fin-type FETs, andtri-gate FETs), two discrete essentially rectangular-shaped non-planarsemiconductor bodies (also referred to herein as semiconductor fins) canbe formed (e.g., using conventional lithographic or sidewall imagetransfer (SIT) patterning and etch techniques) from the semiconductorlayer 204 above the insulator layer 203 (or from the upper portion of abulk semiconductor structure, if applicable).

In any case, as shown in FIG. 10, the semiconductor body 210 cancomprise at least the following components of the first FET 291: a firstsource/drain region 212(a); a second source/drain region 212(b) at oneend 207 and, particularly, the end 207 adjacent to the isolation region205 opposite the end 208 of the additional semiconductor body 215; and achannel region 211 positioned laterally between the first source/drainregion 212(a) and the second source/drain region 212(b). Similarly, theadditional semiconductor body 210 can comprise at least the followingcomponents of the second FET 292: an additional first source/drainregion 214(a); an additional second source/drain region 214(b) at theend 208 of the additional semiconductor body 215 and, particularly, theend 208 adjacent to the isolation region 205 and opposite the end 207 ofthe semiconductor body 210; and an additional channel region 213positioned laterally between the additional first source/drain region214(a) and the additional second source/drain region 214(b). Althoughnot shown, the semiconductor bodies 210 and 215 can each, optionally,comprise one or more additional components for the FETs 291 and 292including, but not limited to, halo region(s) and source/drain extensionregion(s). Such regions are well known in the art and, thus, the detailsthereof are omitted from this specification in order to allow the readerto focus on the salient aspects of the disclosed semiconductorstructures.

It should be understood that, as in conventional FET processing, dopingprocesses used to achieve desired conductivity types and levels in theregions described above (i.e., the channel regions 211, 213, S/D regions212(a)-(b), 214(a)-(b), S/D extension region(s) and halo region(s)) mayoccur at various different times during processing (e.g., before gateformation; after gate formation, but before sidewall spacer formation;etc.). Such doping processes are well known in the art and, thus, thedetails are omitted from this specification in order to allow the readerto focus on the salient aspects of the disclosed method.

The method can further comprise forming multiple gates (1004).Specifically, as shown in FIGS. 5A-5B and 6A-6B, the following gates canbe formed at process 1004: a first gate 221 for the first FET 291adjacent to the semiconductor body 210 at the channel region 211; asecond gate 222 and, particularly, a gate that will be a non-functioninggate (i.e., that will be an inactive gate) adjacent to the semiconductorbody 210 at the interface between the isolation region 205 and thesecond source/drain region 212(b) such that the second source/drainregion 212(b) is between the first gate 221 and the second gate 122; anadditional first gate 223 for the second FET 292 adjacent to thesemiconductor body 215 at the additional channel region 213; and anadditional second gate 224 and, particularly, an additional gate thatwill be an additional non-functioning gate (i.e., that will be anadditional inactive gate) adjacent to the semiconductor body 215 at theinterface between the isolation region 205 and the additional secondsource/drain region 214(b) such that the additional second source/drainregion 214(b) is between the additional first gate 223 and theadditional second gate 224.

These gates can be formed and, particularly, patterned at process 1004so as to have an approximately uniform pitch. These gates can further beformed and, particularly, patterned so that they all have the same gatelength or so that the functioning and non-functioning gates havedifferent lengths (1005). That is, they can all be formed so that thelength 261 of the first gate 221, the length 262 of the second gate 222and the lengths 263 and 264 of the additional first and second gates 223and 224, respectively, are all approximately equal, as shown in theembodiment 200A of FIGS. 5A-5B. Alternatively, they can be formed suchthat the lengths 261 and 263 of the first gate 221 and additional firstgate 223, respectively, (i.e., the lengths of the functioning gates) aregreater than the lengths 262 and 264 of the second gate 222 andadditional second gate 224, respectively, (i.e., the lengths of thenon-functioning gates), as shown in embodiments 200B of FIGS. 6A-6B.

The gates can be formed at process 1004 using, for example, conventionalgate processing techniques such that all of the gates (i.e., the firstgate 221 of the first FET 291, the second gate 222, the additional firstgate 223 of the second FET 292 and the additional second gate 224) havethe same composition. For example, they can all be formed asconventional gates. That is, one or more gate dielectric layers (e.g., asilicon oxide gate dielectric layer) can deposited over thesemiconductor bodies 210 and 215 and one or more gate conductor layers(e.g., a polysilicon gate conductor layer) can be deposited over thegate dielectric layer(s). The stack of gate dielectric and gateconductor layers can then be lithographically patterned and etch to formmultiple conventional gates, having the gate pitch, gate lengths, etc.,as described above. Next, gate sidewall spacers 225 (e.g., siliconnitride gate sidewall spacers) can be formed on the sidewalls of thegates (e.g., using conventional sidewall spacer formation techniques).

Alternatively, the gates can be formed at process 1004 using, forexample, replacement metal gate processing techniques such that all ofthe gates (i.e., the first gate 221 of the first FET 291, the secondgate 222, the additional first gate 223 of the second FET 292 and theadditional second gate 224) comprise replacement metal gates or suchthat the first gate 221 and additional first gate 223 (i.e., thefunctioning gates) comprise replacement metal gates and the second gate222 and additional second gate 224 (i.e., the non-functioning gates)comprise dummy gates. That is, a blanket layer of a dummy gate material(e.g., a semiconductor material, such as silicon, polysilicon, oramorphous silicon, or a dielectric material) can be deposited over thesemiconductor bodies 210 and 215. This blanket layer can belithographically patterned and etched to form multiple dummy gates. Themultiple dummy gates can have the same positions, gate pitch, gatelengths, etc. as required for the gates 221-223. Next, gate sidewallspacers 225 (e.g., silicon nitride gate sidewall spacers) can be formedon the sidewalls of the dummy gates (e.g., using conventional sidewallspacer formation techniques). Following gate sidewall spacer formation,one or more layers of interlayer dielectric material 290 can bedeposited over the dummy gates and planarized to expose the top surfacesof the dummy gates. The interlayer dielectric material can comprise, forexample, one or more layers of any of the following: silicon dioxide,silicon nitride, silicon oxynitride, borophosphosilicate glass (BPSG),phosphosilicate glass (BPSG), boron silicate glass (BSG), undopedsilicate glass (USG), or any other suitable interlayer dielectricmaterial. Next, either all of the dummy gates or only the dummy gatescorresponding to the first gate 221 and additional first gate 223 (i.e.,the functioning gates for the FETs 291 and 292) can be selectivelyremoved, creating openings in the interlayer dielectric material thatare lined with gate sidewall spacers 225. It should be noted that thedummy gate material, sidewall spacer material and interlayer dielectricmaterial should be different materials so as to allow the dummy gates tobe selectively removed. Replacement metal gates can then be formed inthese openings by depositing a conformal high-K gate dielectric layerand, then, forming one or more metal layers on the high-K gatedielectric layer.

It should be noted that in the embodiment 200A of FIGS. 5A-5B all of thegates are laterally surrounded by gate sidewall spacers 225 (e.g.,silicon nitride gate sidewall spacers). However, in the embodiment 200Bof FIGS. 6A-6B only the first gate 221 of the first FET 291 and theadditional first gate 223 of the second FET 292 (i.e., the functioninggates for the FETs 291-292) have gate sidewall spacers 225 and thesecond gate 222 and the additional second gate 224 (i.e., thenon-functioning gates) are devoid of such gate sidewall spacers. Toachieve the embodiment 200A, all the gates can be formed, as describedabove, so as to have gate sidewall spacers or, alternatively, to achievethe embodiment 200B, the second gate 222 and additional second gate 224can be masked during gate sidewall spacer formation or any gate sidewallspacer material formed on the second gate 222 and additional second gate224 during gate sidewall spacer formation can be removed (1006).

Following formation of the multiple gates, one or more layers ofinterlayer dielectric material 290 can be deposited so as to cover themultiple gates and any exposed portions of the semiconductor bodies 210and 215 adjacent to those gates (i.e., any exposed source/drain regions212(a)-(b), 214(a)-(b)) (1008). The interlayer dielectric material cancomprise, for example, one or more layers of any of the following:silicon dioxide, silicon nitride, silicon oxynitride,borophosphosilicate glass (BPSG), phosphosilicate glass (BPSG), boronsilicate glass (BSG), undoped silicate glass (USG), or any othersuitable interlayer dielectric material.

Next, multiple contacts can be formed that extend through the interlayerdielectric material 290 to various components of the FETs 291 and 292(e.g., to the source/drain regions 212(a)-(b), 214(a)-(b) (asillustrated), to the functioning gates (i.e., the first gate 221 andadditional first gate 223) (not shown), etc.) (1010). For the first FET291, the source/drain contacts can comprise a first source/drain contact231 on the first source/drain region 212(a) and a second source/draincontact 232 on the second source/drain region 212(b). For the second FET292, these contacts can comprise an additional first source/draincontact 233 on the additional first source/drain region 214(a); and anadditional second source/drain contact 234 on the additional secondsource/drain region 214(b).

The contacts can be formed and, particularly, patterned at process 1010such that the second source/drain contact 232 is wider than the firstsource/drain contact 231 and, similarly, such that the additional secondsource/drain contact 234 is wider than the additional first source/draincontact 233. Thus, the second source/drain contact 232 will have lowerresistance than the first source/drain contact 231 in the first FET 291and the additional second source/drain contact 234 will have a lowerresistance than the additional first source/drain contact 233 in thesecond FET 292. Additionally, the contacts can be formed and,particularly, patterned at process 1010 such that the secondsource/drain contact 232 is separated from the first gate 221 by somedistance 251 (referred to herein as a first distance) and extendslaterally onto the second gate 222. In this case, the contacts can beformed such that the first source/drain contact 231 is separated fromthe first gate 221 by some distance 253, which is either approximatelyequal to the first distance 251 that separates the first gate 221 fromthe second source/drain contact 232 (see the embodiment 200A of FIGS.5A-5B) or less than that that first distance 251 (see the embodiment200B of FIGS. 6A-6B) (1012). The contacts can further be formed and,particularly, patterned such that the additional first and secondsource/drain contacts 233-234 in the second FET 292 are similarlypositioned such that the FETs 291 and 292 are essentially symmetric.

The contacts can be formed at process 1010, as described above, using,for example, damascene contact formation techniques, self-alignedcontact formation techniques or any other suitable contact formationtechniques. These techniques are well known in the art and, thus, thedetails have been omitted from this specification in order to allow thereader to focus on the salient aspects of the disclosed method.

Placement of the first and second source/drain contacts 231-232 relativeto the first gate 221 and placement of the second source/drain contact232 relative to the second gate 222 at process 1010, as described above,ensures the first gate-to-second source/drain contact capacitance in thefirst FET 291 will be approximately equal to the first gate-to-firstsource/drain contact capacitance (see embodiments 200A of FIGS. 5A-5B)or less than the first gate-to-first source/drain contact capacitance(see embodiments 1200B of FIGS. 6A-6B). Since the second FET 292 isessentially symmetrical to the first FET 291, the additional firstgate-to-additional second source/drain contact capacitance in the secondFET 292 will similarly be equal to or less than the additional firstgate-to-additional first source/drain contact capacitance. Furthermore,reducing the lengths of the second gate 222 and additional second gate224 relative to the lengths of the first gate 221 and the additionalfirst gate 223, respectively, and/or removing the gate sidewall spacerfrom the second gate 222 and additional second gate 224 (see theoptional process steps described above), opens up more surface area ofthe semiconductor bodies 210 and 215 available for formation of thesecond source/drain contact 232 and the additional second source/draincontact 234 and, thereby allows the widths of those contacts 232 and 234to be maximized to further reduce contact resistance without moving themcloser to the gates 221 and 223, respectively and, thereby withoutfurther increasing gate-to-source/drain contact capacitance.

It should be understood that in the semiconductor structures formedaccording to the methods of FIG. 7 or FIG. 10 above the differencebetween the functioning gates and the non-functioning gates is thatcontacts are formed to the functioning gates at process 710 of FIG. 7 orprocess 1010 of FIG. 10, but not to the non-functioning gates. Thus,each functioning gate can be electrically connected during subsequentback end of the line (BEOL) processing to a power supply or otherdevice, which can selectively apply a voltage to the functioning gate inorder to alter current flow in the adjacent channel (i.e., toselectively turn on or off the FET, depending upon the conductivitytype). Since contacts are formed at process 710 of FIG. 7 or process1010 of FIG. 10 to the non-functioning gates, the non-functioning gatesare not subsequently connected to a power supply or other device and,thus, they remain permanently inactive and unable to alter current flowwithin the adjacent semiconductor body.

FIG. 12 shows a block diagram of an exemplary design flow 1200 used forexample, in semiconductor IC logic design, simulation, test, layout, andmanufacture. Design flow 1200 includes processes, machines and/ormechanisms for processing design structures or devices to generatelogically or otherwise functionally equivalent representations of thedesign structures and/or devices described above and shown in FIGS.1A-1B, 2B-2B, 3A-3B, 4A-4B, 5A-5B and 6A-6B. The design structuresprocessed and/or generated by design flow 1200 may be encoded onmachine-readable transmission or storage media to include data and/orinstructions that when executed or otherwise processed on a dataprocessing system generate a logically, structurally, mechanically, orotherwise functionally equivalent representation of hardware components,circuits, devices, or systems. Machines include, but are not limited to,any machine used in an IC design process, such as designing,manufacturing, or simulating a circuit, component, device, or system.For example, machines may include: lithography machines, machines and/orequipment for generating masks (e.g. e-beam writers), computers orequipment for simulating design structures, any apparatus used in themanufacturing or test process, or any machines for programmingfunctionally equivalent representations of the design structures intoany medium (e.g. a machine for programming a programmable gate array).

Design flow 1200 may vary depending on the type of representation beingdesigned. For example, a design flow 1200 for building an applicationspecific IC (ASIC) may differ from a design flow 1200 for designing astandard component or from a design flow 1200 for instantiating thedesign into a programmable array, for example a programmable gate array(PGA) or a field programmable gate array (FPGA) offered by Altera® Inc.or Xilinx® Inc.

FIG. 12 illustrates multiple such design structures including an inputdesign structure 1220 that is preferably processed by a design process1210. Design structure 1220 may be a logical simulation design structuregenerated and processed by design process 1210 to produce a logicallyequivalent functional representation of a hardware device. Designstructure 1220 may also or alternatively comprise data and/or programinstructions that when processed by design process 1210, generate afunctional representation of the physical structure of a hardwaredevice. Whether representing functional and/or structural designfeatures, design structure 1220 may be generated using electroniccomputer-aided design (ECAD) such as implemented by a coredeveloper/designer. When encoded on a machine-readable datatransmission, gate array, or storage medium, design structure 1220 maybe accessed and processed by one or more hardware and/or softwaremodules within design process 1210 to simulate or otherwise functionallyrepresent an electronic component, circuit, electronic or logic module,apparatus, device, or system such as those shown in FIGS. 1A-1B, 2B-2B,3A-3B, 4A-4B, 5A-5B and 6A-6B. As such, design structure 1220 maycomprise files or other data structures including human and/ormachine-readable source code, compiled structures, and computerexecutable code structures that when processed by a design or simulationdata processing system, functionally simulate or otherwise representcircuits or other levels of hardware logic design. Such data structuresmay include hardware-description language (HDL) design entities or otherdata structures conforming to and/or compatible with lower-level HDLdesign languages such as Verilog and VHDL, and/or higher-level designlanguages such as C or C++.

Design process 1210 preferably employs and incorporates hardware and/orsoftware modules for synthesizing, translating, or otherwise processinga design/simulation functional equivalent of the components, circuits,devices, or logic structures shown in FIGS. 1A-1B, 2B-2B, 3A-3B, 4A-4B,5A-5B and 6A-6B to generate a Netlist 1280 which may contain designstructures such as design structure 1220. Netlist 1280 may comprise, forexample, compiled or otherwise processed data structures representing alist of wires, discrete components, logic gates, control circuits, I/Odevices, models, etc. that describes the connections to other elementsand circuits in an integrated circuit design. Netlist 1280 may besynthesized using an iterative process in which netlist 1280 isresynthesized one or more times depending on design specifications andparameters for the device. As with other design structure typesdescribed herein, netlist 1280 may be recorded on a machine-readabledata storage medium or programmed into a programmable gate array. Themedium may be a non-volatile storage medium such as a magnetic oroptical disk drive, a programmable gate array, a compact flash, or otherflash memory. Additionally, or in the alternative, the medium may be asystem or cache memory, buffer space, or electrically or opticallyconductive devices and materials on which data packets may betransmitted and intermediately stored via the Internet, or othernetworking suitable means.

Design process 1210 may include hardware and software modules forprocessing a variety of input data structure types including Netlist1280. Such data structure types may reside, for example, within libraryelements 1230 and include a set of commonly used elements, circuits, anddevices, including models, layouts, and symbolic representations, for agiven manufacturing technology (e.g., different technology nodes, 32 nm,45 nm, 90 nm, etc.). The data structure types may further include designspecifications 1240, characterization data 1250, verification data 1260,design rules 1270, and test data files 1285 which may include input testpatterns, output test results, and other testing information. Designprocess 1210 may further include, for example, standard mechanicaldesign processes such as stress analysis, thermal analysis, mechanicalevent simulation, process simulation for operations such as casting,molding, and die press forming, etc. One of ordinary skill in the art ofmechanical design can appreciate the extent of possible mechanicaldesign tools and applications used in design process 1210 withoutdeviating from the scope and spirit of the invention. Design process1210 may also include modules for performing standard circuit designprocesses such as timing analysis, verification, design rule checking,place and route operations, etc.

Design process 1210 employs and incorporates logic and physical designtools such as HDL compilers and simulation model build tools to processdesign structure 1220 together with some or all of the depictedsupporting data structures along with any additional mechanical designor data (if applicable), to generate a second design structure 1290.Design structure 1290 resides on a storage medium or programmable gatearray in a data format used for the exchange of data of mechanicaldevices and structures (e.g. information stored in a IGES, DXF,Parasolid XT, JT, DRG, or any other suitable format for storing orrendering such mechanical design structures). Similar to designstructure 1220, design structure 1290 preferably comprises one or morefiles, data structures, or other computer-encoded data or instructionsthat reside on transmission or data storage media and that whenprocessed by an ECAD system generate a logically or otherwisefunctionally equivalent form of one or more of the embodiments of theinvention shown in FIGS. 1A-1B, 2B-2B, 3A-3B, 4A-4B, 5A-5B and 6A-6B. Inone embodiment, design structure 1290 may comprise a compiled,executable HDL simulation model that functionally simulates the devicesshown in FIGS. 1A-1B, 2B-2B, 3A-3B, 4A-4B, 5A-5B and 6A-6B.

Design structure 1290 may also employ a data format used for theexchange of layout data of integrated circuits and/or symbolic dataformat (e.g. information stored in a GDSII (GDS2), GL1, OASIS, mapfiles, or any other suitable format for storing such design datastructures). Design structure 1290 may comprise information such as, forexample, symbolic data, map files, test data files, design contentfiles, manufacturing data, layout parameters, wires, levels of metal,vias, shapes, data for routing through the manufacturing line, and anyother data required by a manufacturer or other designer/developer toproduce a device or structure as described above and shown in FIGS.1A-1B, 2B-2B, 3A-3B, 4A-4B, 5A-5B and 6A-6B. Design structure 1290 maythen proceed to a stage 1295 where, for example, design structure 1290:proceeds to tape-out, is released to manufacturing, is released to amask house, is sent to another design house, is sent back to thecustomer, etc.

A representative hardware environment (i.e., a computer system) forimplementing the above described design flow is depicted in FIG. 13.This schematic drawing illustrates a hardware configuration of aninformation handling/computer system in accordance with the embodimentsherein. The system comprises at least one processor or centralprocessing unit (CPU) 10. The CPUs 10 are interconnected via a systembus 12 to various devices such as a random access memory (RAM) 14,read-only memory (ROM) 16, and an input/output (I/O) adapter 18. The I/Oadapter 18 can connect to peripheral devices, such as disk units 11 andtape drives 13, or other program storage devices that are readable bythe system. The system can read the inventive instructions on theprogram storage devices and follow these instructions to execute themethodology of the embodiments herein. The system further includes auser interface adapter 19 that connects a keyboard 15, mouse 17, speaker24, microphone 22, and/or other user interface devices such as a touchscreen device (not shown) to the bus 12 to gather user input.Additionally, a communication adapter 20 connects the bus 12 to a dataprocessing network 25, and a display adapter 21 connects the bus 12 to adisplay device 23 which may be embodied as an output device such as amonitor, printer, or transmitter, for example.

It should be understood that the terminology used herein is for thepurpose of describing the disclosed structures and methods and is notintended to be limiting. For example, as used herein, the singular forms“a”, “an” and “the” are intended to include the plural forms as well,unless the context clearly indicates otherwise. Additionally, as usedherein, the terms “comprises” “comprising”, “includes” and/or“including” specify the presence of stated features, integers, steps,operations, elements, and/or components, but do not preclude thepresence or addition of one or more other features, integers, steps,operations, elements, components, and/or groups thereof. Furthermore, asused herein, terms such as “right”, “left”, “vertical”, “horizontal”,“top”, “bottom”, “upper”, “lower”, “under”, “below”, “underlying”,“over”, “overlying”, “parallel”, “perpendicular”, etc., are intended todescribe relative locations as they are oriented and illustrated in thedrawings (unless otherwise indicated) and terms such as “touching”,“on”, “in direct contact”, “abutting”, “directly adjacent to”, etc., areintended to indicate that at least one element physically contactsanother element (without other elements separating the describedelements). The corresponding structures, materials, acts, andequivalents of all means or step plus function elements in the claimsbelow are intended to include any structure, material, or act forperforming the function in combination with other claimed elements asspecifically claimed.

The descriptions of the various embodiments of the present inventionhave been presented for purposes of illustration, but are not intendedto be exhaustive or limited to the embodiments disclosed. Manymodifications and variations will be apparent to those of ordinary skillin the art without departing from the scope and spirit of the describedembodiments. The terminology used herein was chosen to best explain theprinciples of the embodiments, the practical application or technicalimprovement over technologies found in the marketplace, or to enableothers of ordinary skill in the art to understand the embodimentsdisclosed herein.

Therefore, disclosed above are semiconductor structures comprising atleast one field effect transistor (FET) having a low-resistancesource/drain contact and, optionally, low gate-to-source/drain contactcapacitance. The semiconductor structures can comprise a semiconductorbody and, within the semiconductor body, first and second source/drainregions and a channel region for a FET. A first gate for the FET can beadjacent to the semiconductor body at the channel region and anon-functioning second gate can be adjacent to the semiconductor bodysuch that the second source/drain region is between the first and secondgates. First and second source/drain contacts can be on the first andsource/drain regions, respectively. The second source/drain contact canbe wider than the first so as to have a lower resistance than the firstsource/drain contact. Additionally, spacing of the first and secondsource/drain contacts relative to the first gate can be such that thefirst gate-to-second source/drain contact capacitance is equal to orless than the first gate-to-first source/drain contact capacitance.

What is claimed is:
 1. A semiconductor structure comprising: asemiconductor body having a top surface and comprising: a firstsource/drain region; a second source/drain region; a channel regionpositioned laterally between said first source/drain region and saidsecond source/drain region and a well region positioned laterallyadjacent to said second source/drain region opposite said channel regionand having a same type conductivity; multiple gates comprising: a firstgate adjacent to said top surface of said semiconductor body at saidchannel region and having a first sidewall; and a second gate adjacentto said top surface of said semiconductor body at said well region andhaving a second sidewall; a gate sidewall spacer adjacent to the firstsidewall; dielectric material above said semiconductor body at saidsecond source/drain region so as to be positioned laterally adjacent toand between said multiple gates, wherein said dielectric material isphysically separated from said first sidewall by said gate sidewallspacer and immediately adjacent to said second sidewall; and multiplecontacts comprising: a first source/drain contact extending through saiddielectric material and adjacent to said top surface of saidsemiconductor body at said first source/drain region; and, a secondsource/drain contact extending through said dielectric material adjacentto said top surface of said semiconductor body at said secondsource/drain region such that said second source/drain contact ispositioned laterally between said first gate and said second gate, saidsecond source/drain contact being wider than said first source/draincontact and closer to said second gate than said first gate.
 2. Thesemiconductor structure of claim 1, said second source/drain contactbeing separated from said first gate by a first distance and from saidsecond gate by a second distance that is less than said first distance,and said first source/drain contact being separated from said first gateby a third distance that is approximately equal to said first distance.3. The semiconductor structure of claim 1, said second source/draincontact being separated from said first gate by a first distance andfrom said second gate by a second distance that is less than said firstdistance, and said first source/drain contact being separated from saidfirst gate by a third distance that is less than said first distance. 4.The semiconductor structure of claim 1, said first gate being longerthan said second gate.
 5. The semiconductor structure of claim 1, saidfirst source/drain contact extending vertically through said dielectricmaterial to said top surface of said semiconductor body at said firstsource/drain region and being essentially parallel to and physicalseparated from said first gate, and said second source/drain contactextending vertically through said dielectric material to said topsurface of said second source/drain contact and being essentiallyparallel to, physically separated from and positioned laterally betweensaid first gate and said second gate.
 6. A semiconductor structurecomprising: a semiconductor body having a top surface and comprising: afirst source/drain region; a second source/drain region; a channelregion positioned laterally between said first source/drain region andsaid second source/drain region; and a well region positioned laterallyadjacent to said second source/drain region opposite said channel regionand having a same type conductivity as said channel region; multiplegates comprising: a first gate adjacent to said top surface of saidsemiconductor body at said channel region; and a second gate adjacent tosaid top surface of said semiconductor body at said well region, saidfirst gate having a first gate length and said second gate having asecond gate length that is shorter than said first gate length, and saidsecond gate being non-functioning; multiple contacts comprising: a firstsource/drain contact adjacent to said top surface of said semiconductorbody at said first source/drain region; and, a second source/draincontact adjacent to said top surface of said semiconductor body at saidsecond source/drain region such that said second source/drain contact ispositioned laterally between said first gate and said second gate, saidsecond source/drain contact being wider than said first source/draincontact and closer to said second gate than said first gate; anddielectric material above said multiple gates and further above saidsemiconductor body at said first source/drain region and said secondsource/drain region so as to be positioned laterally adjacent to andbetween said multiple gates, said first source/drain contact extendingvertically through said dielectric material to said top surface of saidsemiconductor body at said first source/drain region and beingessentially parallel to and physical separated from said first gate,said second source/drain contact extending vertically through saiddielectric material to said top surface of said second source/draincontact and being essentially parallel to, physically separated from andpositioned laterally between said first gate and said second gate, andsaid first gate having a first sidewall, said second gate having asecond sidewall, and said semiconductor structure further comprising agate sidewall spacer immediately adjacent to said first sidewall,wherein said dielectric material is physically separated from said firstsidewall by said gate sidewall spacer and immediately adjacent to saidsecond sidewall.
 7. The semiconductor structure of claim 6, said secondsource/drain contact being separated from said first gate by a firstdistance and from said second gate by a second distance that is lessthan said first distance, and said first source/drain contact beingseparated from said first gate by a third distance that is less thansaid first distance.